Fast growth rate epitaxy on 4((degrees)under-bar) off-cut 4-inch diameter 4H-SiC wafers
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications , 2014, Vol. 778-780, 179-182 p.Conference paper (Refereed)
We report the development of over 100 mu m/h growth rate process on 4-inch diameter wafers using chlorinated growth. The optimized growth process has shown extremely smooth epilayers completely free of surface step-bunching with very low surface defect density, high uniformity in thickness and doping and high run to run reproducibility in growth rate, controlled doping and defect density.
Place, publisher, year, edition, pages
Trans Tech Publications , 2014. Vol. 778-780, 179-182 p.
, Materials Science Forum, ISSN 1662-9752 ; 778-780
Fast epitaxial growth; high growth rate; chlorinated growth; atomic force microscopy
Other Materials Engineering
IdentifiersURN: urn:nbn:se:liu:diva-108193DOI: 10.4028/www.scientific.net/MSF.778-780.179ISI: 000336634100042OAI: oai:DiVA.org:liu-108193DiVA: diva2:729507
15th International Conference on Silicon Carbide and Related Materials (ICSCRM), Miyazaki, Japan, 29 Sptember - 4 October 2013