Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications , 2014, Vol. 778-780, 175-178 p.Conference paper (Refereed)
Chemical vapor deposition of silicon carbide (SiC-CVD) is a complex process involving a Si-C-H system wherein a large number of reaction steps occur. To simulate such a system requires knowledge of thermochemical and transport properties of all the species involved in the process. The accuracy of this information consequently becomes a crucial factor toward the correctness of the outcome prediction. In this work, the thermochemical data for several important growth species for SiC CVD using the SiH4/CxHy/H-2 system has been calculated. For the most part an excellent agreement is seen with previously reported data, however for the organosilicons a larger deviation is detected and in particular for the CH3SiH2SiH species which shows a stark deviation from the CHEMKIN database. Impacts of the improved database on SiC CVD modeling are presented in computational fluid dynamics calculations, manifesting the significance of an accurate database.
Place, publisher, year, edition, pages
Trans Tech Publications , 2014. Vol. 778-780, 175-178 p.
, Materials Science Forum, ISSN 1662-9752 ; 778-780
Thermochemical data; CVD modeling; organosilicon
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-108192DOI: 10.4028/www.scientific.net/MSF.778-780.175ISI: 000336634100041OAI: oai:DiVA.org:liu-108192DiVA: diva2:729508
SILICON CARBIDE AND RELATED MATERIALS 2013