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Homo-epitaxial growth on low-angle off cut 4H-SiC substrate
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications Inc., 2014, Vol. 778-780, 131-134 p.Conference paper, Published paper (Refereed)
Abstract [en]

The growth of 4H-SiC epilayers on 1.28 degrees off-cut substrates is reported in this study and comparison when using standard 4 degrees and 8 degrees off-cut substrates is added. Growth at high temperature is needed for the polytype stability, whereas low C/Si is requested to decrease both triangular defects density and roughness of the grown surface. An in-situ etching with Si rich ambient allows the growth of epilayers with specular surface. The formation of Si droplets can be observed on the grown surfaces when lowering the growth temperature and appears first for the high off-cut angle.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2014. Vol. 778-780, 131-134 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 778-780
Keyword [en]
epitaxy; CVD; low-off axis; morphology; AFM
National Category
Ceramics
Identifiers
URN: urn:nbn:se:liu:diva-108190DOI: 10.4028/www.scientific.net/MSF.778-780.131ISI: 000336634100030OAI: oai:DiVA.org:liu-108190DiVA: diva2:729510
Conference
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), Miyazaki, Japan, Sep. 29-Oct 04, 2013
Available from: 2014-06-26 Created: 2014-06-26 Last updated: 2014-10-28Bibliographically approved

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Li, XunJanzén, ErikHenry, Anne

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