Silicon and oxygen in high-Al-content AlGaN: incorporation kinetics and electron paramagnetic resonance study
2014 (English)In: Gettering and Defect Engineering in Semiconductor Technology XV, Trans Tech Publications Inc., 2014, Vol. 205-206, 441-445 p.Conference paper (Refereed)
The high-Al-content AlxGa1-xN alloys, xgreater than0.70, and AlN is the fundamental wide-band-gap material system associated with the technology development of solid-state LEDs operating at the short wavelengths in the deep-UV (lambda less than 280 nm). Yet, their properties are insufficiently understood. The present study is intended to bring elucidation on the long-time debated and much speculated Si transition from shallow donor in GaN to a localized deep DX defect in AlxGa1-xN alloys with increasing Al content. For that purpose electron paramagnetic resonance is performed on a particular selection of high-Al-content epitaxial layers of Al0.77Ga0.23N, alternatively Al0.72Ga0.28N, alloy composition.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2014. Vol. 205-206, 441-445 p.
, Solid State Phenomena, ISSN 1662-9779 ; 205-206
AlGaN; MOCVD; Si doping; electron paramagnetic resonance
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-108182DOI: 10.4028/www.scientific.net/SSP.205-206.441ISI: 000336338000065OAI: oai:DiVA.org:liu-108182DiVA: diva2:729521
15th International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST), 22- 27 September, 2013, Oxford, ENGLAND