liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Silicon and oxygen in high-Al-content AlGaN: incorporation kinetics and electron paramagnetic resonance study
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Show others and affiliations
2014 (English)In: Gettering and Defect Engineering in Semiconductor Technology XV, Trans Tech Publications Inc., 2014, Vol. 205-206, 441-445 p.Conference paper, Published paper (Refereed)
Abstract [en]

The high-Al-content AlxGa1-xN alloys, xgreater than0.70, and AlN is the fundamental wide-band-gap material system associated with the technology development of solid-state LEDs operating at the short wavelengths in the deep-UV (lambda less than 280 nm). Yet, their properties are insufficiently understood. The present study is intended to bring elucidation on the long-time debated and much speculated Si transition from shallow donor in GaN to a localized deep DX defect in AlxGa1-xN alloys with increasing Al content. For that purpose electron paramagnetic resonance is performed on a particular selection of high-Al-content epitaxial layers of Al0.77Ga0.23N, alternatively Al0.72Ga0.28N, alloy composition.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2014. Vol. 205-206, 441-445 p.
Series
Solid State Phenomena, ISSN 1662-9779 ; 205-206
Keyword [en]
AlGaN; MOCVD; Si doping; electron paramagnetic resonance
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-108182DOI: 10.4028/www.scientific.net/SSP.205-206.441ISI: 000336338000065OAI: oai:DiVA.org:liu-108182DiVA: diva2:729521
Conference
15th International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST), 22- 27 September, 2013, Oxford, ENGLAND
Available from: 2014-06-26 Created: 2014-06-26 Last updated: 2014-08-21Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Kakanakova-Gueorguie, AneliaNilsson, DanielTrinh, Xuan ThangSon, Nguyen TienJanzén, Erik

Search in DiVA

By author/editor
Kakanakova-Gueorguie, AneliaNilsson, DanielTrinh, Xuan ThangSon, Nguyen TienJanzén, Erik
By organisation
Semiconductor MaterialsThe Institute of Technology
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 96 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf