liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Photoluminescence quenching in films of conjugated polymers by electrochemical doping
Eindhoven University of Technology, The Netherlands.
Eindhoven University of Technology, The Netherlands; University of Lisbon, Portugal .
Eindhoven University of Technology, The Netherlands.
Eindhoven University of Technology, The Netherlands.
Show others and affiliations
2014 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 89, no 20, 205206- p.Article in journal (Refereed) Published
Abstract [en]

An important loss mechanism in organic electroluminescent devices is exciton quenching by polarons. Gradual electrochemical doping of various conjugated polymer films enabled the determination of the doping density dependence of photoluminescence quenching. Electrochemical doping was achieved by contacting the film with a solid electrochemical gate and an injecting contact. A sharp reduction in photoluminescence was observed for doping densities between 1018 and 1019 cm(-3). The doping density dependence is quantitatively modeled by exciton diffusion in a homogeneous density of polarons followed by either F "orster resonance energy transfer or charge transfer. Both mechanisms need to be considered to describe polaron-induced exciton quenching. Thus, to reduce exciton-polaron quenching in organic optoelectronic devices, both mechanisms must be prevented by reducing the exciton diffusion, the spectral overlap, the doping density, or a combination thereof.

Place, publisher, year, edition, pages
American Physical Society , 2014. Vol. 89, no 20, 205206- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-108168DOI: 10.1103/PhysRevB.89.205206ISI: 000336650700011OAI: oai:DiVA.org:liu-108168DiVA: diva2:729571
Available from: 2014-06-26 Created: 2014-06-26 Last updated: 2017-09-28Bibliographically approved

Open Access in DiVA

fulltext(540 kB)265 downloads
File information
File name FULLTEXT01.pdfFile size 540 kBChecksum SHA-512
f2094cc77c83affa8194befbcc0a973c2b4a23d1097da838939626d32e41474257c13e2c93b625aef6cd132a8ae50e445801970dd18e6e56eacece4dfd092641
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Kemerink, Martijn

Search in DiVA

By author/editor
Kemerink, Martijn
By organisation
Complex Materials and DevicesThe Institute of Technology
In the same journal
Physical Review B. Condensed Matter and Materials Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 265 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 92 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf