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Comparative study on dry etching of α- and β-SiC nano-pillars
IMEP-LAHC, Grenoble Cedex 1, France.
LTM/CNRS, Grenoble Cedex 9, France.
IMEP-LAHC, Grenoble Cedex 1, France.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
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2013 (English)In: Silicon Carbide and Related Materials 2012 / [ed] Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, Scientific.Net , 2013, 817-820 p.Conference paper, Published paper (Refereed)
Abstract [en]

A comprehensive study on different polytypes (α-SiC and β-SiC) and crystal orientations ((0001) and (11-20) of 6H-SiC) has been investigated in order to elaborate Silicon carbide (SiC) nanopillar using inductively coupled plasma etching method. The SiC nanopillars with the cross section of rhombus, pentagon, and hexagonal have been obtained on β-SiC (001), misoriented α-SiC (11-20), and α-SiC (0001) on-axis substrates, respectively. It was found that crystal orientations and polytypes play key roles for the morphology of SiC nanopillars, which reflects the so-called Wulff's rule.

Place, publisher, year, edition, pages
Scientific.Net , 2013. 817-820 p.
Series
Materials Science Forum, ISSN 0255-5476 (print), 1662-9752 (online) ; 740 - 742
Keyword [en]
nanopillars, Dry etching, SiC polytypes
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-108776DOI: 10.4028/www.scientific.net/MSF.740-742.817ISBN: 978-3-03785-624-6 (print)OAI: oai:DiVA.org:liu-108776DiVA: diva2:732546
Conference
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russia
Available from: 2014-07-04 Created: 2014-07-04 Last updated: 2014-12-08Bibliographically approved

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Henry, Anne

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
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  • Other style
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Language
  • de-DE
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  • nn-NB
  • sv-SE
  • Other locale
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Output format
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