Comparative study on dry etching of α- and β-SiC nano-pillars
2013 (English)In: Silicon Carbide and Related Materials 2012 / [ed] Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, Scientific.Net , 2013, 817-820 p.Conference paper (Refereed)
A comprehensive study on different polytypes (α-SiC and β-SiC) and crystal orientations ((0001) and (11-20) of 6H-SiC) has been investigated in order to elaborate Silicon carbide (SiC) nanopillar using inductively coupled plasma etching method. The SiC nanopillars with the cross section of rhombus, pentagon, and hexagonal have been obtained on β-SiC (001), misoriented α-SiC (11-20), and α-SiC (0001) on-axis substrates, respectively. It was found that crystal orientations and polytypes play key roles for the morphology of SiC nanopillars, which reflects the so-called Wulff's rule.
Place, publisher, year, edition, pages
Scientific.Net , 2013. 817-820 p.
, Materials Science Forum, ISSN 0255-5476 (print), 1662-9752 (online) ; 740 - 742
nanopillars, Dry etching, SiC polytypes
IdentifiersURN: urn:nbn:se:liu:diva-108776DOI: 10.4028/www.scientific.net/MSF.740-742.817ISBN: 978-3-03785-624-6OAI: oai:DiVA.org:liu-108776DiVA: diva2:732546
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russia