Epitaxial growth and characterisation of 4H-SiC layers
2013 (English)In: Journal of the Japanese Association for Crystal Growth, ISSN 0385-6275, Vol. 40, no 1, 42-48 p.Article, review/survey (Refereed) Published
The growth of thick 4H-SiC epilayers needed for high power applications is described using horizontal hot-wall chemical vapor deposition with both the standard and the chloride based chemistry. The use of various kinds of substrates (various off-axis and nominally on-axis substrates) is compared and advantages and drawbacks are discussed for each case. Low angle off-cut substrates are proposed for further development of the SiC activities. Using the chloride based approach the Cl/Si ratio is a new important parameter and chlorinated precursor as methyl-trichlorosilane is shown more efficient than the simple addition of chlorine to the gas mixture
Place, publisher, year, edition, pages
2013. Vol. 40, no 1, 42-48 p.
IdentifiersURN: urn:nbn:se:liu:diva-108778OAI: oai:DiVA.org:liu-108778DiVA: diva2:732555