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Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
University of Cambridge, England .
University of Cambridge, England National Phys Lab, England .
Chalmers, Sweden .
Chalmers, Sweden .
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2014 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 14, no 6, 3369-3373 p.Article in journal (Refereed) Published
Abstract [en]

We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.

Place, publisher, year, edition, pages
American Chemical Society , 2014. Vol. 14, no 6, 3369-3373 p.
Keyword [en]
SiC epitaxial graphene; quantum hall effect; scanning gate microscopy; monolayer and bilayer graphene; resistance metrology; quantum point contact
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-108933DOI: 10.1021/nl5008757ISI: 000337337100060OAI: diva2:734197
Available from: 2014-07-15 Created: 2014-07-13 Last updated: 2014-07-15

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Yakimova, Rositsa
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