Photoelectrochemical water splitting and hydrogen generation by a spontaneously formed InGaN nanowall network
2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 104, no 22, 223104-1-223104-3 p.Article in journal (Refereed) Published
We investigate photoelectrochemical water splitting by a spontaneously formed In-rich InGaN nanowall network, combining the material of choice with the advantages of surface texturing for light harvesting by light scattering. The current density for the InGaN-nanowalls-photoelectrode at zero voltage versus the Ag/AgCl reference electrode is 3.4 mA cm(-2) with an incident-photon-to-current-conversion efficiency (IPCE) of 16% under 350 nm laser illumination with 0.075 W.cm(-2) power density. In comparison, the current density for a planar InGaN-layer-photoelectrode is 2 mA cm(-2) with IPCE of 9% at zero voltage versus the Ag/AgCl reference electrode. The H-2 generation rates at zero externally applied voltage versus the Pt counter electrode per illuminated area are 2.8 and 1.61 mu mol.h(-1).cm(-2) for the InGaN nanowalls and InGaN layer, respectively, revealing similar to 57% enhancement for the nanowalls. (C) 2014 AIP Publishing LLC.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014. Vol. 104, no 22, 223104-1-223104-3 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-108928DOI: 10.1063/1.4881324ISI: 000337161700064OAI: oai:DiVA.org:liu-108928DiVA: diva2:734201