Structure and electrical properties of Nb-Ge-C nanocomposite coatings
2014 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 32, no 4, 041509- p.Article in journal (Refereed) Published
Nb-Ge-C nanocomposite thin films were deposited by dc magnetron sputtering using three elemental targets. The films consist of substoichiometric NbCx in a nanometer-thick matrix of amorphous C and Ge. Films with no Ge contain grains that are elongated in the growth direction with a (111) preferred crystallographic orientation. With the addition of similar to 12 at. % Ge, the grains are more equiaxed and exhibit a more random orientation. At even higher Ge contents, the structure also becomes denser. The porous structure of the low Ge content films result in O uptake from the ambient. With higher C content in the films both the amount of amorphous C and C/Nb-ratio increases. The contact resistance was measured by four-point technique as a function of contact force between 0 and 10 N. The lowest contact resistance (1.7 m Omega) is obtained at 10 N. The resistivity varies between 470 and 1700 mu Omega center dot cm depending on porosity and O content.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014. Vol. 32, no 4, 041509- p.
IdentifiersURN: urn:nbn:se:liu:diva-109236DOI: 10.1116/1.4882856ISI: 000338718400021OAI: oai:DiVA.org:liu-109236DiVA: diva2:737177