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Effect of Gate Electrode Work-Function on Source Charge Injection in Electrolyte-Gated Organic Field-Effect Transistors
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7016-6514
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, The Institute of Technology.
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-8845-6296
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2014 (English)In: Advanced Functional Materials, ISSN 1616-301X, E-ISSN 1616-3028, Vol. 24, no 5, 695-700 p.Article in journal (Refereed) Published
Abstract [en]

Systematic investigation of the contact resistance in electrolyte-gated organic field-effect transistors (OFETs) demonstrates a dependence of source charge injection versus gate electrode work function. This analysis reveals contact-limitations at the source metal-semiconductor interface and shows that the contact resistance increases as low work function metals are used as the gate electrode. These findings are attributed to the establishment of a built-in potential that is high enough to prevent the Fermi-level pinning at the metal-organic interface. This results in an unfavorable energetic alignment of the source electrode with the valence band of the organic semiconductor. Since the operating voltage in the electrolyte-gated devices is on the same order as the variation of the work functions, it is possible to tune the contact resistance over more than one order of magnitude by varying the gate metal.

Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2014. Vol. 24, no 5, 695-700 p.
National Category
Chemical Sciences Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-109203DOI: 10.1002/adfm.201302070ISI: 000337968400015OAI: oai:DiVA.org:liu-109203DiVA: diva2:737316
Available from: 2014-08-12 Created: 2014-08-11 Last updated: 2017-12-05Bibliographically approved

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Fabiano, SimoneBraun, SlawomirFahlman, MatsCrispin, XavierBerggren, Magnus

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