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Spin dynamics of isoelectronic bound excitons in ZnO
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-6405-9509
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7155-7103
2014 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 89, no 23, 235202- p.Article in journal (Refereed) Published
Abstract [en]

Time-resolved optical spin orientation is employed to study spin dynamics of I * and I-1* excitons bound to isoelectronic centers in bulk ZnO. It is found that spin orientation at the exciton ground state can be generated using resonant excitation via a higher lying exciton state located at about 4 meV from the ground state. Based on the performed rate equation analysis of the measured spin dynamics, characteristic times of subsequent hole, electron, and direct exciton spin flips in the exciton ground state are determined as being tau(s)(h) = 0.4 ns, tau(s)(e) greater than= 15 ns, and tau(s)(eh) greater than= 15 ns, respectively. This relatively slow spin relaxation of the isoelectronic bound excitons is attributed to combined effects of (i) weak e-h exchange interaction, (ii) restriction of the exciton movement due to its binding at the isoelectronic center, and (iii) suppressed spin-orbit coupling for the tightly bound hole.

Place, publisher, year, edition, pages
American Physical Society , 2014. Vol. 89, no 23, 235202- p.
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-109184DOI: 10.1103/PhysRevB.89.235202ISI: 000338017300003OAI: oai:DiVA.org:liu-109184DiVA: diva2:737360
Available from: 2014-08-12 Created: 2014-08-11 Last updated: 2017-12-05Bibliographically approved

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Chen, ShulaChen, WeiminBuyanova, Irina

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