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Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques
Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
2014 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

The aim with this thesis has been to make a survey of radiation hardened electronics, explaining why and how radiation affects electronics and what can be done to harden it.

The effects radiation have on electronics in general and in specific commonly used devices are explained qualitatively. The effects are divided into Displacement Damage (DD), Total Ionizing Dose (TID) and Single Event Effects (SEEs). The devices explained are MOSFETs, Silicon On Insulator (SOI) transistors, 3D-transistors, Power transistors, Optocouplers, Field Programmable Gate Arrays (FPGAs), three dimensional circuits (3D-ICs) and Flash memories.

Different radiation hardening by design (RHBD) techniques used to reduce or to remove the negative effects radiation induces in electronics are also explained. The techniques are Annular transistors, Enclosed source/drain transistors, Guard rings, Triple Modular Redundancy (TMR), Dual Interlocked Storage Cells (DICE), Guard gates, Temporal filtering,Multiple drive, Charge dissipation, Differential Charge Cancellation (DCC), Scrubbing, Lockstep, EDAC codes and Watchdog timers.

Place, publisher, year, edition, pages
2014. , 50 p.
Keyword [en]
Radiation, Radiation Hardening By Design, RHBD, Displacement Damage, DDD, Total Ionizing
National Category
Embedded Systems
URN: urn:nbn:se:liu:diva-109343ISRN: LiTH-ISY-EX--14/4771--SEOAI: diva2:737778
Subject / course
Electronic Devices
Available from: 2014-08-14 Created: 2014-08-14 Last updated: 2014-08-18Bibliographically approved

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Walldén, Johan
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Electronic DevicesThe Institute of Technology
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