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Strain sensitivity in the nitrogen 1s NEXAFS spectra of gallium nitride
University of Saskatchewan, Saskatoon, SK, Canada.
University of Saskatchewan, Saskatoon, SK, Canada.
Canadian Light Source, Saskatoon, SK, Canada.
University of Saskatchewan, Saskatoon, SK, Canada.
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2014 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 316, 232-236 p.Article in journal (Refereed) Published
Abstract [en]

The nitrogen 1s near edge X-ray absorption fine structure (NEXAFS) of gallium nitride (GaN) shows astrong natural linear dichroism that arises from its anisotropic wurtzite structure. An additional spectro-scopic variation arises from lattice strain in epitaxially grown GaN thin films. This variation is directlyproportional to the degree of strain for some spectroscopic features. This strain variation is interpretedwith the aid of density functional theory calculations.

Place, publisher, year, edition, pages
Elsevier, 2014. Vol. 316, 232-236 p.
Keyword [en]
GaN, Semiconductor strain, NEXAFS, XANES
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-109795DOI: 10.1016/j.apsusc.2014.07.070ISI: 000343329100034OAI: oai:DiVA.org:liu-109795DiVA: diva2:741436
Available from: 2014-08-28 Created: 2014-08-28 Last updated: 2017-12-05Bibliographically approved

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Olovsson, WeineMagnuson, Martin

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