Silicon carbide field effect transistors for detection of ultra-low concentrations of hazardous volatile organic compounds
2014 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 778-780, 1067-1070 p.Article in journal (Refereed) Published
Gas sensitive silicon carbide field effect transistors with nanostructured Ir gate layershave been used for the first time for sensitive detection of volatile organic compounds (VOCs) atpart per billion level, for indoor air quality applications. Formaldehyde, naphthalene, and benzenehave been used as typical VOCs in dry air and under 10% and 20% relative humidity. A singleVOC was used at a time to study long-term stability, repeatability, temperature dependence, effectof relative humidity, sensitivity, response and recovery times of the sensors.
Place, publisher, year, edition, pages
2014. Vol. 778-780, 1067-1070 p.
Silicon carbide, MISFET, Gas sensors, Volatile organic compounds, Indoor air quality
IdentifiersURN: urn:nbn:se:liu:diva-109869DOI: 10.4028/www.scientific.net/MSF.778-780.1067ISI: 000336634100254OAI: oai:DiVA.org:liu-109869DiVA: diva2:741554
A short term scientific mission (STSM) grant is acknowledged from the COST Action TD1105. SenSiC AB, Sweden, is acknowledged for providing the SiC-FET sensors.2014-08-282014-08-282015-06-01Bibliographically approved