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Visualisation of edge effects in side-gated graphene nanodevices
National Physical Laboratory, England, University of London, England .
Chalmers, Sweden .
Istituto Nazionale di Ricerca Metrologica, Italy .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2014 (English)In: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 4, no 5881Article in journal (Refereed) Published
Abstract [en]

Using local scanning electrical techniques we study edge effects in side-gated Hall bar nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of similar to 60-125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination is minimal. We also show that the electronic properties at the edges can be precisely tuned from hole to electron conduction by using moderate strength electrical fields created by side-gates. However, the central part of the channel remains relatively unaffected by the side-gates and retains the bulk properties of graphene.

Place, publisher, year, edition, pages
Nature Publishing Group: Open Access Journals - Option B / Nature Publishing Group , 2014. Vol. 4, no 5881
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-109880DOI: 10.1038/srep05881ISI: 000339938900002PubMedID: 25073589OAI: oai:DiVA.org:liu-109880DiVA: diva2:741594
Note

Funding Agencies|NMS under the IRD Graphene Project (NPL); EMRP

Available from: 2014-08-28 Created: 2014-08-28 Last updated: 2017-12-05

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Yakimova, Rositsa

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