Silicon carbide detector for laser-generated plasma radiation
2013 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 272, 128-131 p.Article in journal (Refereed) Published
We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiation emittedby laser generated plasmas. The detector has been employed in time of flight (TOF) configuration withinan experiment performed at the Prague Asterix Laser System (PALS). The detector is a 5 mm2 area 100 nmthick circular Ni SiC Schottky junction on a high purity 4H-SiC epitaxial layer 115 μm thick. Currentsignals from the detector with amplitudes up to 1.6 A have been measured, achieving voltage signals over 80 V on a 50 Ω load resistance with excellent signal to noise ratios. Resolution of few nanoseconds hasbeen experimentally demonstrated in TOF measurements. The detector has operated at 250 V DC biasunder extreme operating conditions with no observable performance degradation.
Place, publisher, year, edition, pages
Elsevier, 2013. Vol. 272, 128-131 p.
Semiconductor radiation detectors, Silicon carbide, Laser, Plasma, Radiation spectroscopy
IdentifiersURN: urn:nbn:se:liu:diva-109915DOI: 10.1016/j.apsusc.2012.03.183OAI: oai:DiVA.org:liu-109915DiVA: diva2:741609
5th Workshop on Plasma Production by Laser Ablation (PPLA2011)
This research has been supported by the Italian National Institute of Nuclear Physics (INFN) under LIANA experiment and by Laser-LabEurope (Project No.: pals 001653).2014-08-282014-08-282014-09-26Bibliographically approved