X-γ Ray Spectroscopy With Semi-Insulating 4H-Silicon Carbide
2013 (English)In: IEEE Transactions on Nuclear Science, ISSN 0018-9499, E-ISSN 1558-1578, Vol. 60, no 2, 1436-1441 p.Article in journal (Refereed) Published
Radiation detectors on a semi-insulating (SI) 4H siliconcarbide (SiC) wafer have been manufactured and characterizedwith X and photons in the range 8–59 keV. The detectors were 400 μm diameter circular Ni-SiC junctions on an SI 4H-SiC wafer thinned to 70 μm. Dark current densities of 3.5 nA/cm2 at 20 °C and 0.3 μA/cm2 at 104 °C with an internal electric field of 7 kV/cm have been measured. X-γ ray spectra from 241Am have been acquired at room temperature with pulser line width of 756 eV FWHM. The charge collection efficiency (CCE) has been measured under different experimental conditions with a maximum CCE = 75 % at room temperature. Polarization effects have been observed, and the dependence of CCE on time and temperature has been measured and analyzed. The charge trapping has been described by the Hecht model with a maximum totalmean drift length of 107 μm at room temperature.
Place, publisher, year, edition, pages
IEEE , 2013. Vol. 60, no 2, 1436-1441 p.
Charge collection efficiency (CCE), Polarization effect, Radiation detectors, Semiconductor detectors, Semi-insulating (SI) crystals, Silicon carbide (SiC), X-ray spectroscopy
IdentifiersURN: urn:nbn:se:liu:diva-109916DOI: 10.1109/TNS.2013.2252019OAI: oai:DiVA.org:liu-109916DiVA: diva2:741619