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Silicon Carbide Microstrip Detectors for High Resolution X-Ray Spectroscopy
Politecnico di Milano, Como Campus, Italy. (Department of Electronic Engineering and Information Science)
Politecnico di Milano, Como Campus, Italy. (Department of Electronic Engineering and Information Science)
(Selex Sistemi Integrati, Rome, Italy)
2012 (English)Conference proceedings (editor) (Refereed)
Abstract [en]

Silicon Carbide (SiC) is a wide bandgap semiconductor with outstanding physical properties for realizing ionizing radiation detectors. We present the manufacturing, electrical and spectroscopic characterization of a prototype SiC microstrip detector constituted by 32 strips, 2 mm long, 25 μm wide with 55 μm pitch. The detectors have been fabricated on 115 μm thick undoped epitaxial 4H-SiC using Ni-SiC Schottky junctions. The measured leakage currents are below 5 fA at 25 °C and 0.6 pA at 107 °C with internal electric fields up to 30 kV/cm. X-ray spectra from 55Fe and 241Am with energy resolution of 224 eV FWHM and 249 eV FWHM (12-13.5 electrons r.m.s.) have been acquired at 20 °C and 80 °C, respectively.

Place, publisher, year, edition, pages
World Scientific, 2012. , 5 p.
Keyword [en]
Silicon carbide, Microstrip detectors, X-ray spectroscopy
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-109919DOI: 10.1142/9789814405072_0097OAI: oai:DiVA.org:liu-109919DiVA: diva2:741638
Conference
13th ICATPP Conf. 2011, Astroparticle, Particle, Space Physics and Detectors for Physics Applications, Villa Olmo, Como, Italy
Note

Work partially supported by Italian Space Agency (ASI) and Italian National Institute of Nuclear Physics (INFN).

Available from: 2014-08-28 Created: 2014-08-28 Last updated: 2014-08-28

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Puglisi, Donatella

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  • nn-NB
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