Advances in silicon carbide X-ray detectors
2011 (English)In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, Vol. 652, no 1, 193-196 p.Article in journal (Refereed) Published
The latest advances in SiC X-ray detectors are presented: a pixel detector coupled to a custom ultra-low noise CMOS preamplifier has been characterized at room and high temperature. An equivalent noise energy (ENE) of 113 eV FWHM, corresponding to 6.1 electrons r.m.s., has been achieved with the detector/front- end system operating at 30 °C. A Fano factor of F = 0.10 has been estimated from the 55Fe spectrum. When the system is heated up to 100 °C, the measured ENE is 163 eV FWHM (8.9 electrons r.m.s.). It is determined that both at room and at high temperature the performance are fully limited by the noise of the front-end electronics. It is also presented the capability of SiC detectors to operate in environments under unstable temperature conditions without any apparatus for temperature stabilization; it has been proved that a SiC detector can acquire high resolution X-ray spectra without spectral line degradation while the system temperature changes between 30 °C and 75 °C.
Place, publisher, year, edition, pages
Elsevier, 2011. Vol. 652, no 1, 193-196 p.
Silicon carbide, Semiconductor radiation detectors, X-ray detectors, X-ray spectroscopy, Low noise electronics
IdentifiersURN: urn:nbn:se:liu:diva-109920DOI: 10.1016/j.nima.2010.08.046OAI: oai:DiVA.org:liu-109920DiVA: diva2:741642
Symposium on Radiation Measurements and Applications (SORMA) XII 2010
This research has been supported by the Italian National Institute of Nuclear Physics (INFN).2014-08-282014-08-282014-09-26Bibliographically approved