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Recharging behavior of nitrogen-centers in ZnO
I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, D-35392 Giessen, Germany .
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7155-7103
Department of Physics and Astronomy and Materials Science Program, Washington State University, Pullman, Washington 99164-2814, USA.
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2014 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 116, no 063701Article in journal (Refereed) Published
Abstract [en]

Electron Paramagnetic Resonance was used to study N2-centers in ZnO, which show a 5-line spectrum described by the hyperfine interaction of two nitrogen nuclei (nuclear spin I  = 1, 99.6% abundance). The recharging of this center exhibits two steps, a weak onset at about 1.4 eV and a strongly increasing signal for photon energies above 1.9 eV. The latter energy coincides with the recharging energy of NO centers (substitutional nitrogen atoms on oxygen sites). The results indicate that the N2-centers are deep level defects and therefore not suitable to cause significant hole-conductivity at room temperature.

Place, publisher, year, edition, pages
2014. Vol. 116, no 063701
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Condensed Matter Physics
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URN: urn:nbn:se:liu:diva-109926DOI: 10.1063/1.4892632ISI: 000341179400023OAI: oai:DiVA.org:liu-109926DiVA: diva2:741661
Available from: 2014-08-28 Created: 2014-08-28 Last updated: 2017-12-05

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Stehr, Jan EricBuyanova, Irina

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