Recharging behavior of nitrogen-centers in ZnO
2014 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 116, no 063701Article in journal (Refereed) Published
Electron Paramagnetic Resonance was used to study N2-centers in ZnO, which show a 5-line spectrum described by the hyperfine interaction of two nitrogen nuclei (nuclear spin I = 1, 99.6% abundance). The recharging of this center exhibits two steps, a weak onset at about 1.4 eV and a strongly increasing signal for photon energies above 1.9 eV. The latter energy coincides with the recharging energy of NO centers (substitutional nitrogen atoms on oxygen sites). The results indicate that the N2-centers are deep level defects and therefore not suitable to cause significant hole-conductivity at room temperature.
Place, publisher, year, edition, pages
2014. Vol. 116, no 063701
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-109926DOI: 10.1063/1.4892632ISI: 000341179400023OAI: oai:DiVA.org:liu-109926DiVA: diva2:741661