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Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy
University of California, San Diego, La Jolla, USA .
University of California, San Diego, La Jolla, USA .
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Gwangju institute of Science and Technology (GIST), South Korea .
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2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 7, 072107- p.Article in journal (Refereed) Published
Abstract [en]

We have demonstrated self-catalyzed GaN xP1−x and GaN xP1−x/GaNyP1−y core/shell nanowire growth by gas-source molecular beam epitaxy. The growth window for GaN xP1−x nanowires was observed to be comparable to that of GaP nanowires (∼585 °C to ∼615 °C). Transmission electron microscopy showed a mixture of cubic zincblende phase and hexagonal wurtzite phase along the [111] growth direction in GaN xP1−x nanowires. A temperature-dependent photoluminescence (PL) study performed on GaN xP1−x/GaNyP1−y core/shell nanowires exhibited an S-shape dependence of the PL peaks. This suggests that at low temperature, the emission stems from N-related localized states below the conduction band edge in the shell, while at high temperature, the emission stems from band-to-band transition in the shell as well as recombination in the GaN xP1−x core.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014. Vol. 105, no 7, 072107- p.
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Condensed Matter Physics
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URN: urn:nbn:se:liu:diva-109928DOI: 10.1063/1.4893745ISI: 000341189800042OAI: oai:DiVA.org:liu-109928DiVA: diva2:741663
Available from: 2014-08-28 Created: 2014-08-28 Last updated: 2017-12-05Bibliographically approved

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Chen, WeiminBuyanova, Irina

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