Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy
2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 7, 072107- p.Article in journal (Refereed) Published
We have demonstrated self-catalyzed GaN xP1−x and GaN xP1−x/GaNyP1−y core/shell nanowire growth by gas-source molecular beam epitaxy. The growth window for GaN xP1−x nanowires was observed to be comparable to that of GaP nanowires (∼585 °C to ∼615 °C). Transmission electron microscopy showed a mixture of cubic zincblende phase and hexagonal wurtzite phase along the  growth direction in GaN xP1−x nanowires. A temperature-dependent photoluminescence (PL) study performed on GaN xP1−x/GaNyP1−y core/shell nanowires exhibited an S-shape dependence of the PL peaks. This suggests that at low temperature, the emission stems from N-related localized states below the conduction band edge in the shell, while at high temperature, the emission stems from band-to-band transition in the shell as well as recombination in the GaN xP1−x core.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014. Vol. 105, no 7, 072107- p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-109928DOI: 10.1063/1.4893745ISI: 000341189800042OAI: oai:DiVA.org:liu-109928DiVA: diva2:741663