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Diffusion Length in n-doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe
University of Catania, Italy.
University of Catania, Italy.
Politecnico di Milano, Como Campus, Italy.
2009 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 615-617, 857-860 p.Article in journal (Refereed) Published
Abstract [en]

The achievement of nuclear detectors in silicon carbide imposes severe constraints onthe electronic quality and thickness of the material due to the relatively high value of the energyrequired to generate an electron-hole pair (7.8 eV) in this material compared to the value for Si (3.6 eV). In this work, 4H-SiC charged particle detectors were realised using epitaxial layers ofn-type doping as active region. The thickness of the epilayer is always below 80 μm with a netdoping concentration in the range of 8 x 1013 to 1016 cm-3. These properties allowed the fabricationof Schottky diodes that operate well as radiation detectors. At low doping concentration, theepilayer is totally depleted at quite low reverse bias (≈ 50 V), thereby obtaining the maximumactive volume.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2009. Vol. 615-617, 857-860 p.
Keyword [en]
Silicon carbide, Nuclear detectors, Diffusion length, Alpha particles, Wide band gap
National Category
Physical Sciences
URN: urn:nbn:se:liu:diva-109923DOI: 10.4028/ diva2:741664

Work supported by the Italian National Institute of Nuclear Physics (INFN), Italy, within the "High Tickness Silicon Carbide" (HiT-SiC) project.

Available from: 2014-08-28 Created: 2014-08-28 Last updated: 2014-09-26Bibliographically approved

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Puglisi, Donatella
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