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Zinc-Vacancy–Donor Complex: A Crucial Compensating Acceptor in ZnO
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
University of Oslo, Norway.
University of Oslo, Norway.
University of Oslo, Norway.
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2014 (English)In: Physical Review Applied, ISSN 2331-7019, Vol. 2, no 021001Article in journal, Letter (Refereed) Published
Abstract [en]

The aluminum–zinc-vacancy (Al Zn −V Zn ) complex is identified as one of the dominant defects in Al-containing n -type ZnO after electron irradiation at room temperature with energies above 0.8 MeV. The complex is energetically favorable over the isolated V Zn , binding more than 90% of the stable V Zn ’s generated by the irradiation. It acts as a deep acceptor with the (0/− ) energy level located at approximately 1 eV above the valence band. Such a complex is concluded to be a defect of crucial and general importance that limits the n -type doping efficiency by complex formation with donors, thereby literally removing the donors, as well as by charge compensation.

Place, publisher, year, edition, pages
American Physical Society , 2014. Vol. 2, no 021001
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Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-109930DOI: 10.1103/PhysRevApplied.2.021001ISI: 000344332700001OAI: oai:DiVA.org:liu-109930DiVA: diva2:741666
Available from: 2014-08-28 Created: 2014-08-28 Last updated: 2017-03-27Bibliographically approved

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Stehr, Jan EricChen, WeiminBuyanova, Irina

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