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Comparison of carrier lifetime measurements and mapping in 4H SIC using time resolved photoluminescence and μ-PCD
Fraunhofer IISB, Erlangen, Germany.
Fraunhofer IISB, Erlangen, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Stafa-Zurich, Switzerland: Trans Tech Publications , 2014, Vol. 778-780, 301-304 p.Conference paper, Published paper (Refereed)
Abstract [en]

Carrier lifetime measurements and wafer mappings have been done on several different 4H SiC epiwafers to compare two different measurement techniques, time-resolved photoluminescence and microwave induced photoconductivity decay. The absolute values of the decay time differ by a factor of two, as expected from recombination and measurement theory. Variations within each wafer are comparable with the two techniques. Both techniques are shown to be sensitive to substrate quality and distribution of extended defects.

Place, publisher, year, edition, pages
Stafa-Zurich, Switzerland: Trans Tech Publications , 2014. Vol. 778-780, 301-304 p.
Series
Materials Science Forum, ISSN 0255-5476 ; vol 778-780
Keyword [en]
Carrier lifetime; Photoluminescence; Silicon carbide; μ-PCD
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-110541DOI: 10.4028/www.scientific.net/MSF.778-780.301ISI: 000336634100071Scopus ID: 2-s2.0-84896069395ISBN: 9783038350101 (print)OAI: oai:DiVA.org:liu-110541DiVA: diva2:746884
Conference
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Available from: 2014-09-15 Created: 2014-09-12 Last updated: 2014-09-15

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Lilja, Louiseul-Hassan, JawadBooker, Ian DonJanzén, ErikBergman, Peder

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Lilja, Louiseul-Hassan, JawadBooker, Ian DonJanzén, ErikBergman, Peder
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Semiconductor MaterialsThe Institute of Technology
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CiteExportLink to record
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