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Anomalous excitation-power-dependent photoluminescence of InGaAsN/GaAs T-shaped quantum wire
Khon Kaen University, Thailand Nanotec KKU Centre Excellence Adv Nanomat Energy Pro, Thailand Khon Kaen University, Thailand .
Chulalongkorn University, Thailand .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2014 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 211, no 8, 1740-1744 p.Article in journal (Refereed) Published
Abstract [en]

The selected InGaAsN/GaAs T-shaped quantum wire (T-QWR) fabricated by metal organic vapor phase epitaxy has been investigated by microphotoluminescence (m-PL) and excitation-power-dependent mu-PL. The optical characteristics of one-dimensional structure were taken at low-temperature (4 K) and room temperature (RT) to clarify the intersection of two familiar quantum wells (QWs) in the [001] and [110] directions, named QW1 and QW2, respectively. For the excitation-power-dependent measurement, the intensity of the excitation source was used in the range of 0.001I(0) to I-0. The result shows that all of emissions related to QW1 and QWR peaks have a nonsymmetric line shape as evidenced by the tailing on the lower-energy side. All peaks shift to higher-energy side (blueshift) with the increase of the excitation power intensity. The blueshift and the low-energy tailing of PL peaks are attributed to the alloying effect. However, the emission peak related to QWR region shows a larger blueshift rate than that of QW1 on increasing of the excitation power intensity. This is an anomalous characteristic for the low-dimensional structure, affected by the large fluctuation state in the QWR region. This fluctuation state is combined of both edges of QWs (QW1 and QW2).

Place, publisher, year, edition, pages
Wiley-VCH Verlag , 2014. Vol. 211, no 8, 1740-1744 p.
Keyword [en]
GaAs; InGaAsN; MOVPE; photoluminescence; quantum wires
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-110487DOI: 10.1002/pssa.201330543ISI: 000340521000010OAI: oai:DiVA.org:liu-110487DiVA: diva2:746891
Note

Funding Agencies|Institute for Promotion of Teaching Science and Technology (IPST); National Nanotechnology Center (NANOTEC), NSTDA, Ministry of Science and Technology, Thailand, through its program of Center of Excellence Network; Thailand Research Fund [TRG5280030]; Thai Government Stimulus Package 2 under the project for Establishment of Comprehensive Center for Innovative Food, Health Products and Agriculture [TKK2555]

Available from: 2014-09-15 Created: 2014-09-12 Last updated: 2017-12-05

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Karlsson, FredrikHoltz, Per-Olof

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