Deep traps in 4H-SiC MOS capacitors investigated by deep level transient spectroscopy
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 / [ed] Okumura, H; Harima, H; Kimoto, T; Yoshimoto, M; Watanabe, H; Hatayama, T; Matsuura, H; Funaki, T; Sano, Y, Stafa-Zurich. Switzerland: Trans Tech Publications , 2014, Vol. 778-780, 603-606 p.Conference paper (Refereed)
Using Deep Level Transient Spectroscopy (DLTS) on n-type MOS capacitors we find that thermal oxidation of 4H-SiC produces deep traps at or near the SiO2/SiC interface with two well defined DLTS peaks. The traps are located ~ 0.85 V and ~ 1.0 eV below the SiC conduction band edge and are present in wet and dry oxides as well as oxides produced by sodium enhanced oxidation and oxides grown in N2O. The deep traps are located at the SiO/SiC interface after oxidation at 1150C but do extend further into the SiC epilayer after oxidation at 1240C. We identify these traps as ON1 and ON2 which been observed in epitaxial layers after oxidation at very high temperatures (1200-1500C) .
Place, publisher, year, edition, pages
Stafa-Zurich. Switzerland: Trans Tech Publications , 2014. Vol. 778-780, 603-606 p.
, Materials Science Forum, ISSN 0255-5476 ; Vol 778-780
Dlts; Interface states; MOS; Oxidation induced deep levels
IdentifiersURN: urn:nbn:se:liu:diva-110539DOI: 10.4028/www.scientific.net/MSF.778-780.603ISI: 000336634100142ScopusID: 2-s2.0-84896101031ISBN: 9783038350101OAI: oai:DiVA.org:liu-110539DiVA: diva2:747007
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013