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First principles investigation of divacancy in SiC polytypes for solid state qubit application
Institute for Solid State Physics and Optics, Wigner Research Centre for Physics of the Hungarian Academy of Sciences, Hungary, Institute of Physics, Loránd Eötvös University, Hungary.
Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, The Institute of Technology. Institute for Solid State Physics and Optics, Wigner Research Centre for Physics of the Hungarian Academy of Sciences, Hungary .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Institute for Solid State Physics and Optics, Wigner Research Centre for Physics of the Hungarian Academy of Sciences, Hungary, Department of Atomic Physics, Budapest University of of Technology and Economics, Hungary.
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Stafa-Zurich, Switzerland: Trans Tech Publications , 2014, Vol. 778-780, 499-502 p.Conference paper, Published paper (Refereed)
Abstract [en]

We calculated the hyperfine structure and the zero-field splitting parameters of divacancies in 3C, 4H and 6H SiC in the ground state and in the excited state for 4H SiC within the framework of density functional theory. Besides that our calculations provide identification of the defect in different polytypes, we can find some carbon atoms next to the divacancy that of the spin polarizations are similar in the ground and excited states. This coherent nuclear spin polarization phenomenon can be the base to utilize 13C spins as quantum memory.

Place, publisher, year, edition, pages
Stafa-Zurich, Switzerland: Trans Tech Publications , 2014. Vol. 778-780, 499-502 p.
Series
Materials Science Forum, ISSN 0255-5476 ; Vol 778-780
Keyword [en]
Hyperfine coupling; Optically detected magnetic resonance; Photoluminescence; Solid state quantum bit; Zero-field splitting
National Category
Physical Sciences Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-110538DOI: 10.4028/www.scientific.net/MSF.778-780.499ISI: 000336634100117Scopus ID: 2-s2.0-84896083747ISBN: 9783038350101 (print)OAI: oai:DiVA.org:liu-110538DiVA: diva2:747040
Conference
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Available from: 2014-09-15 Created: 2014-09-12 Last updated: 2014-09-15

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Ivády, ViktorJanzén, Erik

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