liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Carrier mobility as a function of temperature in as-grown and H-intercalated epitaxial graphenes on 4H-SiC
Chalmers University of of Technology, Göteborg, Sweden.
Science Institute, University of of Iceland, Reykjavík, Iceland.
Science Institute, University of of Iceland, Reykjavík, Iceland.
Science Institute, University of of Iceland, Reykjavík, Iceland.
Show others and affiliations
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications , 2014, Vol. 778-780, 1146-1149 p.Conference paper, Published paper (Refereed)
Abstract [en]

The carrier velocity is measured as a function of electric field in as-grown and Hintercalaed epitaxial graphene grown on semi-insulating 4H-SiC in order to estimate the low field carrier mobility as a function of temperature. The mobility is also measured on the same samples as a function of temperature in a liquid Helium (He) cooled cryostat. The two temperature dependent measurements are compared in order to deduce the dominant carrier scattering mechanisms in both materials. In as-grown material, acoustic phonon scattering and impurity scattering both contribute, while impurity scattering dominates in H-intercalated material.

Place, publisher, year, edition, pages
Trans Tech Publications , 2014. Vol. 778-780, 1146-1149 p.
Series
Materials Science Forum, ISSN 0255-5476 ; Vol 778-780
Keyword [en]
Carrier density; Electron transport; Epitaxial growth; Graphene; Mobility; Scattering; SiC
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-110546DOI: 10.4028/www.scientific.net/MSF.778-780.1146ISI: 000336634100270Scopus ID: 2-s2.0-84896074541ISBN: 9783038350101 (print)OAI: oai:DiVA.org:liu-110546DiVA: diva2:747075
Conference
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Available from: 2014-09-15 Created: 2014-09-12 Last updated: 2014-09-15

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

ul-Hassan, JawadJanzén, Erik

Search in DiVA

By author/editor
ul-Hassan, JawadJanzén, Erik
By organisation
Semiconductor MaterialsThe Institute of Technology
Chemical Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 47 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf