Carrier mobility as a function of temperature in as-grown and H-intercalated epitaxial graphenes on 4H-SiC
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications , 2014, Vol. 778-780, 1146-1149 p.Conference paper (Refereed)
The carrier velocity is measured as a function of electric field in as-grown and Hintercalaed epitaxial graphene grown on semi-insulating 4H-SiC in order to estimate the low field carrier mobility as a function of temperature. The mobility is also measured on the same samples as a function of temperature in a liquid Helium (He) cooled cryostat. The two temperature dependent measurements are compared in order to deduce the dominant carrier scattering mechanisms in both materials. In as-grown material, acoustic phonon scattering and impurity scattering both contribute, while impurity scattering dominates in H-intercalated material.
Place, publisher, year, edition, pages
Trans Tech Publications , 2014. Vol. 778-780, 1146-1149 p.
, Materials Science Forum, ISSN 0255-5476 ; Vol 778-780
Carrier density; Electron transport; Epitaxial growth; Graphene; Mobility; Scattering; SiC
IdentifiersURN: urn:nbn:se:liu:diva-110546DOI: 10.4028/www.scientific.net/MSF.778-780.1146ISI: 000336634100270ScopusID: 2-s2.0-84896074541ISBN: 9783038350101OAI: oai:DiVA.org:liu-110546DiVA: diva2:747075
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013