Fabrication and design of 10 kV PiN diodes using on-axis 4H-SiC
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications , 2014, Vol. 778-780, 836-840 p.Conference paper (Refereed)
10 kV PiN diodes using on-axis 4H-SiC were designed, fabricated, and measured. A lifetime enhancement procedure was done by carbon implantation followed by high temperature annealing to increase lifetime to above 2 μs. The device simulation software Sentaurus TCAD has been used in order to optimize the diode. All fabricated diodes are fully functional and have a VF of 3.3 V at 100 A/cm2 at 25C, which was decreased to 3.0 V at 300C.
Place, publisher, year, edition, pages
Trans Tech Publications , 2014. Vol. 778-780, 836-840 p.
, Materials Science Forum, ISSN 0255-5476 ; Vol 778-780
Lifetime enhancement; On-axis 4h-SiC; PiN diode
IdentifiersURN: urn:nbn:se:liu:diva-110543DOI: 10.4028/www.scientific.net/MSF.778-780.836ISI: 000336634100198ScopusID: 2-s2.0-84896089454ISBN: 9783038350101OAI: oai:DiVA.org:liu-110543DiVA: diva2:747082
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013