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Fabrication and design of 10 kV PiN diodes using on-axis 4H-SiC
KTH Royal Institute of Technology, Kista, Sweden.
Fairchild Semiconductor, Kista, Sweden.
KTH Royal Institute of Technology, Kista, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications , 2014, Vol. 778-780, 836-840 p.Conference paper, Published paper (Refereed)
Abstract [en]

10 kV PiN diodes using on-axis 4H-SiC were designed, fabricated, and measured. A lifetime enhancement procedure was done by carbon implantation followed by high temperature annealing to increase lifetime to above 2 μs. The device simulation software Sentaurus TCAD has been used in order to optimize the diode. All fabricated diodes are fully functional and have a VF of 3.3 V at 100 A/cm2 at 25C, which was decreased to 3.0 V at 300C.

Place, publisher, year, edition, pages
Trans Tech Publications , 2014. Vol. 778-780, 836-840 p.
Series
Materials Science Forum, ISSN 0255-5476 ; Vol 778-780
Keyword [en]
Lifetime enhancement; On-axis 4h-SiC; PiN diode
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-110543DOI: 10.4028/www.scientific.net/MSF.778-780.836ISI: 000336634100198Scopus ID: 2-s2.0-84896089454ISBN: 9783038350101 (print)OAI: oai:DiVA.org:liu-110543DiVA: diva2:747082
Conference
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Available from: 2014-09-15 Created: 2014-09-12 Last updated: 2014-09-15

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ul-Hassan, JawadBergman, Peder

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Citation style
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