Rapid thermal oxidation of Si-Face N and P-type on-axis 4H-SiC
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications , 2014, Vol. 778-780, 591-594 p.Conference paper (Refereed)
This paper deals with the comparison of several MOS structures with different rapid thermal oxidation processes (RTO) carried out on Off and On-axis SiC material. A first set contains MOS capacitance structures on n-epitaxial layers, while a second set of MOS capacitance are built on p-implanted layers. Both sets include On and Off-Axis angle cuts. Furthermore, n-MOSFETs have been fabricated on On-axis p-type Al-implanted layers with the best oxidation process selected from the MOS capacitance study. The final objective is to show the performances of these On-axis p-implanted n-MOSFETs and to evidence the associated lower surface roughness at the SiO2/SiC interface.
Place, publisher, year, edition, pages
Trans Tech Publications , 2014. Vol. 778-780, 591-594 p.
, Materials Science Forum, ISSN 0255-5476 ; Vol 778-780
4H-SiC; Electrical parameters; MOS capacitor; MOSFET; On-axis; Oxidation; RTP; Si-face
IdentifiersURN: urn:nbn:se:liu:diva-110542DOI: 10.4028/www.scientific.net/MSF.778-780.591ISI: 000336634100139ScopusID: 2-s2.0-84896095379ISBN: 9783038350101OAI: oai:DiVA.org:liu-110542DiVA: diva2:747087
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013