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Rapid thermal oxidation of Si-Face N and P-type on-axis 4H-SiC
CNM-CSIC, Campus UAB, Bellaterra, Spain.
CNM-CSIC, Campus UAB, Bellaterra, Spain.
Laboratoire AMPERE, INSA Lyon, Villeurbanne, France.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
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2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications , 2014, Vol. 778-780, 591-594 p.Conference paper (Refereed)
Abstract [en]

This paper deals with the comparison of several MOS structures with different rapid thermal oxidation processes (RTO) carried out on Off and On-axis SiC material. A first set contains MOS capacitance structures on n-epitaxial layers, while a second set of MOS capacitance are built on p-implanted layers. Both sets include On and Off-Axis angle cuts. Furthermore, n-MOSFETs have been fabricated on On-axis p-type Al-implanted layers with the best oxidation process selected from the MOS capacitance study. The final objective is to show the performances of these On-axis p-implanted n-MOSFETs and to evidence the associated lower surface roughness at the SiO2/SiC interface.

Place, publisher, year, edition, pages
Trans Tech Publications , 2014. Vol. 778-780, 591-594 p.
, Materials Science Forum, ISSN 0255-5476 ; Vol 778-780
Keyword [en]
4H-SiC; Electrical parameters; MOS capacitor; MOSFET; On-axis; Oxidation; RTP; Si-face
National Category
Physical Sciences
URN: urn:nbn:se:liu:diva-110542DOI: 10.4028/ 000336634100139ScopusID: 2-s2.0-84896095379ISBN: 9783038350101OAI: diva2:747087
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Available from: 2014-09-15 Created: 2014-09-12 Last updated: 2014-10-08

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Henry, Anne
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Thin Film PhysicsThe Institute of Technology
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