Applications of vapor-liquid-solid selective epitaxy of highly p-type doped 4H-SiC: PiN diodes with peripheral protection and improvement of specific contact resistance of ohmic contacts
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications , 2014, Vol. 778-780, 639-644 p.Conference paper (Refereed)
This work deals with two applications of the Selective Epitaxial Growth of highly p-type doped buried 4H-SiC in Vapor-Liquid-Solid configuration (SEG-VLS). The first application is the improvement of the Specific Contact Resistance (SCR) of contacts made on such p-type material. As a result of the extremely high doping level, SCR values as low as 1.3x10-6 Ω.cm2 have been demonstrated. Additionally, the high Al concentration of the SEG-VLS 4H-SiC material induces a lowering of the Al acceptor ionization energy down to 40 meV. The second application is the fabrication of PiN diodes with SEG-VLS emitter and guard-rings peripheral protection. Influence of some process parameters and crystal orientation on the forward and reverse characteristics of the PiN diodes is discussed. © (2014) Trans Tech Publications, Switzerland.
Place, publisher, year, edition, pages
Trans Tech Publications , 2014. Vol. 778-780, 639-644 p.
, Materials Science Forum, ISSN 0255-5476
Ohmic contact; P-type 4H-SiC; PiN diode; Selective epitaxial growth; Vapor-liquid-solid
IdentifiersURN: urn:nbn:se:liu:diva-110537DOI: 10.4028/www.scientific.net/MSF.778-780.639ISI: 000336634100151ScopusID: 2-s2.0-84896090012ISBN: 9783038350101OAI: oai:DiVA.org:liu-110537DiVA: diva2:748078
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013