liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Applications of vapor-liquid-solid selective epitaxy of highly p-type doped 4H-SiC: PiN diodes with peripheral protection and improvement of specific contact resistance of ohmic contacts
Université de Lyon, INSA de Lyon, Laboratoire AMPÈRE, CNRS, Villeurbanne, France.
Université de Lyon, INSA de Lyon, Laboratoire AMPÈRE, CNRS, Villeurbanne, France.
Université de Lyon, Université Claude Bernard Lyon1, LMI, CNRS, Villeurbanne, France.
Université de Lyon, Université Claude Bernard Lyon1, LMI, CNRS, Villeurbanne, France.
Show others and affiliations
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Trans Tech Publications , 2014, Vol. 778-780, 639-644 p.Conference paper, Published paper (Refereed)
Abstract [en]

This work deals with two applications of the Selective Epitaxial Growth of highly p-type doped buried 4H-SiC in Vapor-Liquid-Solid configuration (SEG-VLS). The first application is the improvement of the Specific Contact Resistance (SCR) of contacts made on such p-type material. As a result of the extremely high doping level, SCR values as low as 1.3x10-6 Ω.cm2 have been demonstrated. Additionally, the high Al concentration of the SEG-VLS 4H-SiC material induces a lowering of the Al acceptor ionization energy down to 40 meV. The second application is the fabrication of PiN diodes with SEG-VLS emitter and guard-rings peripheral protection. Influence of some process parameters and crystal orientation on the forward and reverse characteristics of the PiN diodes is discussed. © (2014) Trans Tech Publications, Switzerland.

Place, publisher, year, edition, pages
Trans Tech Publications , 2014. Vol. 778-780, 639-644 p.
Series
Materials Science Forum, ISSN 0255-5476
Keyword [en]
Ohmic contact; P-type 4H-SiC; PiN diode; Selective epitaxial growth; Vapor-liquid-solid
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-110537DOI: 10.4028/www.scientific.net/MSF.778-780.639ISI: 000336634100151Scopus ID: 2-s2.0-84896090012ISBN: 9783038350101 (print)OAI: oai:DiVA.org:liu-110537DiVA: diva2:748078
Conference
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Available from: 2014-09-18 Created: 2014-09-12 Last updated: 2014-10-08

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Henry, Anne

Search in DiVA

By author/editor
Henry, Anne
By organisation
Thin Film PhysicsThe Institute of Technology
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 41 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf