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Controlling the carrier concentration of epitaxial graphene by ultraviolet illumination
National Physical Laboratory, Teddington, United Kingdom, Royal Holloway, University of London, United Kingdom.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
National Physical Laboratory, Teddington, United Kingdom.
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 / [ed] Okumura, H; Harima, H; Kimoto, T; Yoshimoto, M; Watanabe, H; Hatayama, T; Matsuura, H; Funaki, T; Sano, Y, Switzerland: Trans Tech Publications , 2014, Vol. 778-780, 1137-1141 p.Conference paper (Refereed)
Abstract [en]

Silicon carbide (SiC) is a well-known material for UV detection however the effect of UV illumination on the electron donation between the substrate, interfacial (or buffer layer) and graphene is not well understood. The effect of ultraviolet (UV) illumination on the carrier concentration of an epitaxial graphene hall bar device is investigated by scanning Kelvin probe microscopy (SKPM) and transport measurements in ambient and vacuum conditions. Modulation of the carrier concentration is demonstrated and shown to be due to both substrate and environmental effects.

Place, publisher, year, edition, pages
Switzerland: Trans Tech Publications , 2014. Vol. 778-780, 1137-1141 p.
, Materials Science Forum, ISSN 0255-5476
Keyword [en]
Carrier concentration modulation; Epitaxial graphene; Scanning kelvin probe microscopy; Ultraviolet illumination
National Category
Chemical Sciences
URN: urn:nbn:se:liu:diva-110535DOI: 10.4028/ 000336634100268ScopusID: 2-s2.0-84896086051ISBN: 9783038350101OAI: diva2:748103
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Available from: 2014-09-18 Created: 2014-09-12 Last updated: 2014-09-18

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Yakimova, Rositsa
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Semiconductor MaterialsThe Institute of Technology
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