Controlling the carrier concentration of epitaxial graphene by ultraviolet illumination
2014 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 / [ed] Okumura, H; Harima, H; Kimoto, T; Yoshimoto, M; Watanabe, H; Hatayama, T; Matsuura, H; Funaki, T; Sano, Y, Switzerland: Trans Tech Publications , 2014, Vol. 778-780, 1137-1141 p.Conference paper (Refereed)
Silicon carbide (SiC) is a well-known material for UV detection however the effect of UV illumination on the electron donation between the substrate, interfacial (or buffer layer) and graphene is not well understood. The effect of ultraviolet (UV) illumination on the carrier concentration of an epitaxial graphene hall bar device is investigated by scanning Kelvin probe microscopy (SKPM) and transport measurements in ambient and vacuum conditions. Modulation of the carrier concentration is demonstrated and shown to be due to both substrate and environmental effects.
Place, publisher, year, edition, pages
Switzerland: Trans Tech Publications , 2014. Vol. 778-780, 1137-1141 p.
, Materials Science Forum, ISSN 0255-5476
Carrier concentration modulation; Epitaxial graphene; Scanning kelvin probe microscopy; Ultraviolet illumination
IdentifiersURN: urn:nbn:se:liu:diva-110535DOI: 10.4028/www.scientific.net/MSF.778-780.1137ISI: 000336634100268ScopusID: 2-s2.0-84896086051ISBN: 9783038350101OAI: oai:DiVA.org:liu-110535DiVA: diva2:748103
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013