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Correcting for contact geometry in Seebeck coefficient measurements of thin film devices
Eindhoven University of Technology, The Netherlands.
Linköping University, Department of Physics, Chemistry and Biology, Complex Materials and Devices. Linköping University, The Institute of Technology. Eindhoven University of Technology, The Netherlands.ORCID iD: 0000-0002-7104-7127
2014 (English)In: Organic electronics, ISSN 1566-1199, Vol. 15, no 10, 2250-2255 p.Article in journal (Refereed) Published
Abstract [en]

Driven by promising recent results, there has been a revived interest in the thermoelectric properties of organic (semi) conductors. Concomitantly, there is a need to probe the Seebeck coefficient S of modestly conducting materials in thin film geometry. Here we show that geometries that seem desirable from a signal-to-noise perspective may induce systematic errors in the measured value of S, S-m, by a factor 3 or more. The enhancement of S-m by the device geometry is related to competing conduction paths outside the region between the electrodes. We derive a universal scaling curve that allows correcting for this and show that structuring the semiconductor is not needed for the optimal electrode configuration, being a set of narrow, parallel strips.

Place, publisher, year, edition, pages
Elsevier, 2014. Vol. 15, no 10, 2250-2255 p.
Keyword [en]
Thermoelectric generators; Seebeck coefficient; Thin films; PEDOT:PSS; Device physics
National Category
Physical Sciences
URN: urn:nbn:se:liu:diva-110956DOI: 10.1016/j.orgel.2014.06.018ISI: 000341290000012OAI: diva2:752294

Funding Agencies|Dutch program NanoNextNL

Available from: 2014-10-03 Created: 2014-10-01 Last updated: 2015-03-06Bibliographically approved

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Kemerink, Martijn
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Complex Materials and DevicesThe Institute of Technology
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