Resonant ionization of shallow donors in electric field
2014 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. 89, no 8, 085802- p.Article in journal (Refereed) Published
In this paper, we report on our experimental observations of the resonant ionization of a phosphorus donor in silicon in a homogeneous electric field, which is expressed in the sudden rise of the conductivity of the sample at a low temperature when the electric field approaches the critical value of ∼3.2 MV m-1. The effect is discussed in terms of the field-induced interaction of the states using a simplified model based on the effective-mass theory. The results from our model are qualitatively similar to the previously published advanced model base, which is based on the first principles; this predicts the ionization thresholds at approximate fields of 2.45 and 3.25 MV m-1, the latter being in very good agreement with our experiment. The possibility of observing more than one resonance is also discussed.
Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2014. Vol. 89, no 8, 085802- p.
Advanced modeling; Critical fields; Effective-mass theory; Electric field approach; Homogeneous electric field; Ionization thresholds; Phosphorus donor; Resonant ionization
IdentifiersURN: urn:nbn:se:liu:diva-111496DOI: 10.1088/0031-8949/89/8/085802ISI: 000343295000036OAI: oai:DiVA.org:liu-111496DiVA: diva2:756817