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Improved GaN-on-SiC transistor thermal resistance by systematic nucleation layer growth optimization
University of Bristol, UK.
Chalmers University of Technology, Göteborg, Sweden .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2013 (English)In: Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE, IEEE , 2013, 1-4 p.Conference paper, Published paper (Refereed)
Abstract [en]

Impressive power densities have been demonstrated for GaN-on-SiC based high-power high-frequency transistors, although further gains can be achieved by further minimizing the device thermal resistance. A significant 10-30% contribution to the total device thermal resistance originates from the high defect density AlN nucleation layer at the GaN/SiC interface. This thermal resistance contribution was successfully reduced by performing systematic growth optimization, investigating growth parameters including: Substrate pretreatment temperature, growth temperature and deposition time. Interfacial thermal resistance, characterized by time resolved Raman thermography measurements AlGaN/GaN HEMT structures, were minimized by using a substrate pretreatment and growth temperature of 1200 °C. Reducing the AlN thickness from 105 nm (3.3×10-8W/m2K) to 35 nm (3.3×10-8 W/m2K), led to a ~2.5× interfacial thermal resistance reduction and the lowest value reported for a standard AlGaN/GaN HEMT structure.

Place, publisher, year, edition, pages
IEEE , 2013. 1-4 p.
Keyword [en]
Gallium nitride, HEMTs, optical microscopy, Raman scattering, semiconductor growth, temperature measurement, thermal analysis, thermal resistance
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-111501DOI: 10.1109/CSICS.2013.6659233ISBN: 978-147990583-6 (print)OAI: oai:DiVA.org:liu-111501DiVA: diva2:756850
Conference
35th IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS 2013), Monterey, CA, USA, 13-16 October 2013
Available from: 2014-10-20 Created: 2014-10-20 Last updated: 2015-04-17Bibliographically approved

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Chen, Jr-TaiForsberg, UrbanJanzén, Erik

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