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EPR Identification of Intrinsic Defects in SiC
University of Tsukuba, Japan .
University of Tsukuba, Japan .
University of Tsukuba, Japan .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2011 (English)In: Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, John Wiley & Sons, 2011, 1, 147-179 p.Chapter in book (Other academic)
Place, publisher, year, edition, pages
John Wiley & Sons, 2011, 1. 147-179 p.
Keyword [en]
EPR identification; intrinsic defects in SiC; isolated vacancy; pulsed ELDOR of TV2a; divacancy; antisites; antisite–vacancy pairs
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Chemical Sciences
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URN: urn:nbn:se:liu:diva-111506DOI: 10.1002/9783527629053.ch6ISBN: 9783527409532 (print)ISBN: 9783527629053 (print)OAI: oai:DiVA.org:liu-111506DiVA: diva2:756903
Available from: 2014-10-20 Created: 2014-10-20 Last updated: 2015-02-24

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Son, Nguyen TienJanzén, Erik

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CiteExportLink to record
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Citation style
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