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Point defects in SiC
Budapest University of Technology and Economics, Hungary .
Universität Erlangen-Nürnberg, Germany .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2008 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Tight control of defects is pivotal for semiconductor technology. However, even the basic defects are not entirely understood in silicon carbide. In the recent years significant advances have been reached in the identification of defects by combining the experimental tools like electron paramagnetic resonance and photoluminescence with ab initio calculations. We summarize these results and their consequences in silicon carbide based technology. We show recent methodological developments making possible the accurate calculation of absorption and emission signals of defects.

Place, publisher, year, edition, pages
2008. 65-76 p.
Series
MRS Proceedings, 1069
Keyword [en]
electron spin resonance, luminescence, defects
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-111510DOI: 10.1557/PROC-1069-D03-01OAI: oai:DiVA.org:liu-111510DiVA: diva2:756938
Conference
2008 MRS Spring Meeting, San Francisco, CA, USA, 24-28 March 2008
Available from: 2014-10-20 Created: 2014-10-20 Last updated: 2014-10-29

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Son, Nguyen TienJanzén, Erik

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