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Hydrogen at zinc vacancy of ZnO: an EPR and ESEEM study
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
University of Tsukuba, Japan .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-1000-0437
Japan Atomic Energy Agency, Takasaki, Japan .
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2014 (English)In: International Conference on Defects in Semiconductors 2013: Proceedings of the 27th International Conference on Defectsin Semiconductors, ICDS-2013 / [ed] Anna Cavallini and Stefan K. Estreicher, American Institute of Physics (AIP), 2014, Vol. 1583, 341-344 p.Conference paper (Refereed)
Abstract [en]

An electron paramagnetic resonance (EPR) spectrum, labeled S1, with small-splitting doublet accompanied by weak satellites is observed in ZnO irradiated with 2 MeV electrons. The obtained structure is shown to be the hyperfine structure due to the dipolar interaction between an unpaired electron spin and a nuclear spin of hydrogen (H). The observation of the nuclear Zeeman frequency of H in electron spin echo envelope modulation experiments further confirmed the presence of a hydrogen atom in S1. From the observed spin-Hamiltonian parameters, S1 is identified to be the partly H-passivated Zn vacancy,V-Zn(-) H+, with the H+ ion making a short O-H bond with only one nearest O neighbor of V-Zn in the basal plane, being off the substitutional site, while the unpaired electron spin, which gives rise to the observed EPR signal, is localized on the p orbital of another O neighbor also in the basal plane.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014. Vol. 1583, 341-344 p.
, AIP Conference Proceedings, ISSN 0094-243X ; 1583
Keyword [en]
ZnO, hydrogen, vacancies, hyperfine interaction, electron paramagnetic resonance.
National Category
Chemical Sciences
URN: urn:nbn:se:liu:diva-111622DOI: 10.1063/1.4865666ISI: 000342321600074ISBN: 978-0-7354-1215-6OAI: diva2:758474
27th International Conference on Defects in Semiconductors (ICDS), 21–26 July 2013, Bologna, Italy
Available from: 2014-10-27 Created: 2014-10-27 Last updated: 2014-11-06Bibliographically approved

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