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Determination of the thickness distribution of a graphene layer grown on a 2 SiC wafer by means of Auger electron spectroscopy depth profiling
Hungarian Academic Science, Hungary.
Hungarian Academic Science, Hungary.
Hungarian Academic Science, Hungary.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2014 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 316, 301-307 p.Article in journal (Refereed) Published
Abstract [en]

Auger electron spectroscopy (AES) depth profiling was applied for determination of the thickness of a macroscopic size graphene sheet grown on 2 in. 6H-SiC (0 0 0 1) by sublimation epitaxy. The measured depth profile deviated from the expected exponential form showing the presence of an additional, buffer layer. The measured depth profile was compared to the simulated one which allowed the derivation of the thicknesses of the graphene and buffer layers and the Si concentration of buffer layer. It has been shown that the graphene-like buffer layer contains about 30% unsaturated Si. The depth profiling was carried out in several points (diameter 50 mu m), which permitted the constructing of a thickness distribution characterizing the uniformity of the graphene sheet.

Place, publisher, year, edition, pages
Elsevier , 2014. Vol. 316, 301-307 p.
Keyword [en]
Graphene on SiC; Buffer layer composition; AES depth profiling; Graphene thickness; Sublimation epitaxy
National Category
Chemical Sciences
URN: urn:nbn:se:liu:diva-112308DOI: 10.1016/j.apsusc.2014.08.019ISI: 000343329100043OAI: diva2:765650

Funding Agencies|Hungarian National Scientific Research Fund (OTKA) [K108869]; Swedish NRC (VR); EC [CNECT-ICT-604391]

Available from: 2014-11-24 Created: 2014-11-24 Last updated: 2014-11-24

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