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Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy
Islamia University of Bahawalpur, Pakistan.
Islamia University of Bahawalpur, Pakistan.
University of N Carolina, NC 28223 USA.
University of N Carolina, NC 28223 USA.
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2014 (English)In: Chinese Physics B, ISSN 1009-1963, E-ISSN 1741-4199, Vol. 23, no 9, 097101- p.Article in journal (Refereed) Published
Abstract [en]

We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE). The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage (I-V) measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49 +/- 0.03 eV and capture cross-section of 8.57 +/- 10(-18) cm(2). Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy (SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO.

Place, publisher, year, edition, pages
IOP Publishing , 2014. Vol. 23, no 9, 097101- p.
Keyword [en]
ZnO; secondary ion mass spectroscopy; photoluminescence; Raman spectroscopy
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-112488DOI: 10.1088/1674-1056/23/9/097101ISI: 000344057200062OAI: oai:DiVA.org:liu-112488DiVA: diva2:766715
Note

Funding Agencies|Fulbright-USA; UNC-Charlotte

Available from: 2014-11-28 Created: 2014-11-28 Last updated: 2017-12-05

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Willander, Magnus

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