Large area buffer-free graphene on non-polar (001) cubic silicon carbide
2014 (English)In: Carbon, ISSN 0008-6223, E-ISSN 1873-3891, Vol. 80, 823-829 p.Article in journal (Refereed) Published
Graphene is, due to its extraordinary properties, a promising material for future electronic applications. A common process for the production of large area epitaxial graphene is a high temperature annealing process of atomically flat surfaces from hexagonal silicon carbide. This procedure is very promising but has the drawback of the formation of a buffer layer consisting of a graphene-like sheet, which is covalently bound to the substrate. This buffer layer degenerates the properties of the graphene above and needs to be avoided. We are presenting the combination of a high temperature process for the graphene production with a newly developed substrate of (0 0 1)-oriented cubic silicon carbide. This combination is a promising candidate to be able to supply large area homogenous epitaxial graphene on silicon carbide without a buffer layer. We are presenting the new substrate and first samples of epitaxial graphene on them. Results are shown using low energy electron microscopy and diffraction, photoelectron angular distribution and X-ray photoemission spectroscopy. All these measurements indicate the successful growth of a buffer free few layer graphene on a cubic silicon carbide surface. On our large area samples also the epitaxial relationship between the cubic substrate and the hexagonal graphene could be clarified.
Place, publisher, year, edition, pages
Elsevier , 2014. Vol. 80, 823-829 p.
IdentifiersURN: urn:nbn:se:liu:diva-112605DOI: 10.1016/j.carbon.2014.09.041ISI: 000344132400088OAI: oai:DiVA.org:liu-112605DiVA: diva2:770207