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Raman spectroscopy of GaP/GaNP core/shell nanowires
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Grad Program Mat Science and Engn, CA 92093 USA.
University of Calif San Diego, CA 92093 USA.
University of Calif San Diego, CA 92093 USA.
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2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 19, 193102- p.Article in journal (Refereed) Published
Abstract [en]

Raman spectroscopy is employed to characterize structural and phonon properties of GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. According to polarization-dependent measurements performed on single NWs, the dominant Raman modes associated with zone-center optical phonons obey selection rules in a zinc-blende lattice, confirming high crystalline quality of the NWs. Two additional modes at 360 and 397 cm(-1) that are specific to the NW architecture are also detected in resonant Raman spectra and are attributed to defect-activated scattering involving zone-edge transverse optical phonons and surface optical phonons, respectively. It is concluded that the formation of the involved defect states are mainly promoted during the NW growth with a high V/III ratio.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2014. Vol. 105, no 19, 193102- p.
National Category
Chemical Sciences
URN: urn:nbn:se:liu:diva-113015DOI: 10.1063/1.4901446ISI: 000345216100062OAI: diva2:778970

Funding Agencies|Vetenskapsradet (Swedish Research Council) [621-2010-3815]; U.S. National Science Foundation [DMR-0907652, DMR-1106369]; Royal Government of Thailand Scholarship

Available from: 2015-01-12 Created: 2015-01-08 Last updated: 2015-01-13

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