Properties of shallow donors in ZnMgO epilayers grown by metal organic chemical vapor deposition
2014 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 116, no 18, 183508- p.Article in journal (Refereed) Published
High quality Zn1-xMgxO epilayers have been grown by means of metal organic chemical vapor deposition technique on top of ZnO templates. The grown samples were investigated by x-ray photoelectron spectroscopy and photoluminescence. The magnesium (Mg) concentration was varied between 0% and 3% in order to study the properties of shallow donors. The free and donor bound excitons could be observed simultaneously in our high quality Zn1-xMgxO epilayers in the photoluminescence spectra. The results indicate that both built-in strain and Mg-concentration influence the donor exciton binding energy. It clearly shows that the donor exciton binding energy decreases with increasing Mg-concentration and with increasing built-in strain. Furthermore, the results indicate that the donor bound exciton transition energy increases with decreasing strength of the built-in strain if the Mg-concentration is kept the same in the Zn1-xMgxO epilayers.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2014. Vol. 116, no 18, 183508- p.
Electrical Engineering, Electronic Engineering, Information Engineering Chemical Sciences
IdentifiersURN: urn:nbn:se:liu:diva-113011DOI: 10.1063/1.4902007ISI: 000345216300017OAI: oai:DiVA.org:liu-113011DiVA: diva2:779010