Increasing the Selectivity of Pt-Gate SiC FieldEffect Gas Sensors by Dynamic Temperature Modulation
2014 (English)In: Proc of E-MRS 2014, Lille, France, May 26-30, 2014, 1-9 p.Conference paper, Abstract (Refereed)
Based on a diode coupled silicon carbide field effect transistor with platinum as catalytic gate material, the influence of dynamic temperature modulation on the selectivity of GasFETs has been investigated. This operating mode, studied intensively for semiconductor gas sensors, has only recently been applied to field effect transistors. A suitable temperature cycle (T-cycle) for detection of typical exhaust gases (CO, NO, C3H6, H2, NH3) was developed and combined with appropriate signal processing. The sensor data was evaluated using multivariate statistics, e.g. linear discriminant analysis (LDA). Measurements have proven that typical exhaust gases can be discriminated in backgrounds with 0%, 10% and 20% oxygen. Furthermore, we are able to quantify the mentioned gases and to determine unknown concentrations based on training data. Very low levels of relative humidity (r.h.) below a few percent influence the sensor response considerably but for higher levels the cross interference of humidity is negligible. In addition, experiments regarding stability and reproducibility were performed.
Place, publisher, year, edition, pages
2014. 1-9 p.
IdentifiersURN: urn:nbn:se:liu:diva-113326OAI: oai:DiVA.org:liu-113326DiVA: diva2:781236
E-MRS 2014, Lille, France, May 26-30