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Excitons and biexcitons in InGaN quantum dot like localization centers
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology. Thaksin University, Thailand.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-4547-6673
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-3203-7935
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2014 (English)In: Nanotechnology, ISSN 0957-4484, Vol. 25, no 49, 495702- p.Article in journal (Refereed) Published
Abstract [en]

Indium segregation in a narrow InGaN single quantum well creates quantum dot (QD) like exciton localization centers. Cross-section transmission electron microscopy reveals varying shapes and lateral sizes in the range ∼1–5 nm of the QD-like features, while scanning near field optical microscopy demonstrates a highly inhomogeneous spatial distribution of optically active individual localization centers. Microphotoluminescence spectroscopy confirms the spectrally inhomogeneous distribution of localization centers, in which the exciton and the biexciton related emissions from single centers of varying geometry could be identified by means of excitation power dependencies. Interestingly, the biexciton binding energy (Ebxx) was found to vary from center to center, between 3 to −22 meV, in correlation with the exciton emission energy. Negative binding energies are only justified by a three-dimensional quantum confinement, which confirms QD-like properties of the localization centers. The observed energy correlation is proposed to be understood as variations of the lateral extension of the confinement potential, which would yield smaller values of Ebxx for reduced lateral extension and higher exciton emission energy. The proposed relation between lateral extension and Ebxx is further supported by the exciton and the biexciton recombination lifetimes of a single QD, which suggest a lateral extension of merely ∼3 nm for a QD with strongly negative Ebxx = −15.5 meV. 

Place, publisher, year, edition, pages
IOP Publishing , 2014. Vol. 25, no 49, 495702- p.
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Physical Sciences Chemical Sciences
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URN: urn:nbn:se:liu:diva-113334DOI: 10.1088/0957-4484/25/49/495702ISI: 000345603800018PubMedID: 25410551OAI: oai:DiVA.org:liu-113334DiVA: diva2:781353
Available from: 2015-01-16 Created: 2015-01-16 Last updated: 2015-03-09

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Amloy, SupaluckKarlsson, K. FredrikEriksson, Martin OPalisaitis, JustinasPersson, Per O. Å.Hsiao, C. L.Holtz, Per-Olof

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Amloy, SupaluckKarlsson, K. FredrikEriksson, Martin OPalisaitis, JustinasPersson, Per O. Å.Hsiao, C. L.Holtz, Per-Olof
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Department of Physics, Chemistry and BiologyThe Institute of TechnologySemiconductor MaterialsThin Film Physics
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