Electronic defects in electron-irradiated silicon carbide and III-nitrides
2014 (English)In: Applications of EPR in Radiation Research / [ed] Anders Lund and Masaru Shiotani, Springer International Publishing , 2014, 417-451 p.Chapter in book (Other academic)
Recent advances in electron paramagnetic resonance (EPR) studies of radiation-induced defects in SiC and III-nitrides are reviewed. The identification and electronic structure investigation of vacancies , interstitials , antisites and their associated complexes in these wide-bandgap semiconductors using EPR in combination with theoretical modeling and other optical and electrical characterizations are presented. The use of intrinsic defects in controlling properties of materials for power electronics is discussed.
Place, publisher, year, edition, pages
Springer International Publishing , 2014. 417-451 p.
IdentifiersURN: urn:nbn:se:liu:diva-113343DOI: 10.1007/978-3-319-09216-4_11ISBN: 978-3-319-09216-4OAI: oai:DiVA.org:liu-113343DiVA: diva2:781374