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Incorporation effects of Si in TiCx thin films
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Uppsala University, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Uppsala University, Sweden.
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2014 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 258, 392-397 p.Article in journal (Refereed) Published
Abstract [en]

Ti-Si-C thin films with varying Si content between 0 to 10 at.% were deposited by DC magnetron sputtering from elemental targets. The effects on microstructure and lattice parameters were investigated using x-ray diffraction, x-ray photoelectron spectroscopy, transmission electron microscopy, and first-principles calculations. The results show that the growth of pure TiCx onto Al2O3(0001) substrates at a temperature of 350 degrees C yields (111) epitaxial and understoichiometric films with x similar to 0.7. For Si contents up to 4 at.%, the TiCx epitaxy is retained locally. Si starts to segregate out from the TiCx to column boundaries at concentrations between 1 and 4 at.%, and causes a transition from epitaxial to polycrystalline growth above 4 at.%. Eventually, the top part of the films form a nanocomposite of crystalline TiC grains surrounded by amorphous SiC and C for Si contents studied up to 10 at.%. The results show that Si takes the place of carbon when incorporated in the TiC lattice.

Place, publisher, year, edition, pages
Elsevier , 2014. Vol. 258, 392-397 p.
Keyword [en]
First-principles calculations; Thin films; Ti-C; Silicon; Physical vapor deposition (PVD)
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-113582DOI: 10.1016/j.surfcoat.2014.08.064ISI: 000346895000049OAI: oai:DiVA.org:liu-113582DiVA: diva2:783022
Note

Funding Agencies|Swedish Agency for Innovation Systems (VINNOVA); Swedish Research Council (VR) [621-2011-4417]; Knut and Alice Wallenberg Foundation

Available from: 2015-01-23 Created: 2015-01-23 Last updated: 2017-12-05

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Tengstrand, OlofAlling, BjörnFlink, AxelEklund, PerHultman, Lars

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