Incorporation effects of Si in TiCx thin films
2014 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 258, 392-397 p.Article in journal (Refereed) Published
Ti-Si-C thin films with varying Si content between 0 to 10 at.% were deposited by DC magnetron sputtering from elemental targets. The effects on microstructure and lattice parameters were investigated using x-ray diffraction, x-ray photoelectron spectroscopy, transmission electron microscopy, and first-principles calculations. The results show that the growth of pure TiCx onto Al2O3(0001) substrates at a temperature of 350 degrees C yields (111) epitaxial and understoichiometric films with x similar to 0.7. For Si contents up to 4 at.%, the TiCx epitaxy is retained locally. Si starts to segregate out from the TiCx to column boundaries at concentrations between 1 and 4 at.%, and causes a transition from epitaxial to polycrystalline growth above 4 at.%. Eventually, the top part of the films form a nanocomposite of crystalline TiC grains surrounded by amorphous SiC and C for Si contents studied up to 10 at.%. The results show that Si takes the place of carbon when incorporated in the TiC lattice.
Place, publisher, year, edition, pages
Elsevier , 2014. Vol. 258, 392-397 p.
First-principles calculations; Thin films; Ti-C; Silicon; Physical vapor deposition (PVD)
IdentifiersURN: urn:nbn:se:liu:diva-113582DOI: 10.1016/j.surfcoat.2014.08.064ISI: 000346895000049OAI: oai:DiVA.org:liu-113582DiVA: diva2:783022
Funding Agencies|Swedish Agency for Innovation Systems (VINNOVA); Swedish Research Council (VR) [621-2011-4417]; Knut and Alice Wallenberg Foundation2015-01-232015-01-232016-08-31