Stacking fault related luminescence in GaN nanorods
2015 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528Article in journal (Refereed) Published
Optical and structural properties are presented for GaN nanorods grown in the direction on Si(111) substrates by direct-current reactive magnetron sputter epitaxy.Transmission electron microscopy reveals clusters of dense stacking faults (SFs) regularlydistributed along the c-axis. A strong emission at ~3.42 eV associated with basal plane SFsdemonstrates thermal stability up to room temperatures together with a relatively shortrecombination time suggesting carrier localization in the system similar to multiple quantumwells.
Place, publisher, year, edition, pages
Institute of Physics (IOP), 2015.
GaN nanorods, stacking faults, time-resolved photoluminescence, recombination time, multiple quantum wells, sputtering
IdentifiersURN: urn:nbn:se:liu:diva-113740DOI: 10.1088/0957-4484/26/35/355203ISI: 000360947200008OAI: oai:DiVA.org:liu-113740DiVA: diva2:784412
Funding: Swedish Research Council (VR); SFF; Angpanneforeningen2015-01-292015-01-292015-10-07Bibliographically approved