Homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy
2015 (English)In: Applied Physics Express, ISSN 1882-0778, Vol. 8, no 1, 015503- p.Article in journal (Refereed) Published
Thick high-purity beta-Ga2O3 layers of high crystalline quality were grown homoepitaxially by halide vapor phase epitaxy (HVPE) using gaseous GaCl and O-2 on (001) beta-Ga2O3 substrates prepared by edge-defined film-fed growth. The surface morphology and structural quality of the grown layer improved with increasing growth temperature. X-ray diffraction omega-rocking curves for the (002) and (400) reflections for the layer grown at 1000 degrees C had small full widths at half maximum. Secondary ion mass spectrometry and electrical characteristics revealed that the growth of high-purity beta-Ga2O3 layers with low effective donor concentration (N-d - N-a less than 10(13) cm(-3)) is possible by HVPE. (C) 2015 The Japan Society of Applied Physics
Place, publisher, year, edition, pages
Japan Society of Applied Physics , 2015. Vol. 8, no 1, 015503- p.
IdentifiersURN: urn:nbn:se:liu:diva-114587DOI: 10.7567/APEX.8.015503ISI: 000348959300021OAI: oai:DiVA.org:liu-114587DiVA: diva2:791445
Funding Agencies|Council for Science, Technology and Innovation (CSTI); Cross-ministerial Strategic Innovation Promotion Program (SIP); "Next-generation power electronics" (funding agency: NEDO)2015-02-272015-02-262015-02-27