liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy
Tokyo University of Agriculture and Technology, Japan.
Tokyo University of Agriculture and Technology, Japan.
Tamura Corp, Japan.
Tamura Corp, Japan; National Institute Informat and Commun Technology, Japan.
Show others and affiliations
2015 (English)In: Applied Physics Express, ISSN 1882-0778, Vol. 8, no 1, 015503- p.Article in journal (Refereed) Published
Abstract [en]

Thick high-purity beta-Ga2O3 layers of high crystalline quality were grown homoepitaxially by halide vapor phase epitaxy (HVPE) using gaseous GaCl and O-2 on (001) beta-Ga2O3 substrates prepared by edge-defined film-fed growth. The surface morphology and structural quality of the grown layer improved with increasing growth temperature. X-ray diffraction omega-rocking curves for the (002) and (400) reflections for the layer grown at 1000 degrees C had small full widths at half maximum. Secondary ion mass spectrometry and electrical characteristics revealed that the growth of high-purity beta-Ga2O3 layers with low effective donor concentration (N-d - N-a less than 10(13) cm(-3)) is possible by HVPE. (C) 2015 The Japan Society of Applied Physics

Place, publisher, year, edition, pages
Japan Society of Applied Physics , 2015. Vol. 8, no 1, 015503- p.
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-114587DOI: 10.7567/APEX.8.015503ISI: 000348959300021OAI: oai:DiVA.org:liu-114587DiVA: diva2:791445
Note

Funding Agencies|Council for Science, Technology and Innovation (CSTI); Cross-ministerial Strategic Innovation Promotion Program (SIP); "Next-generation power electronics" (funding agency: NEDO)

Available from: 2015-02-27 Created: 2015-02-26 Last updated: 2015-02-27

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Monemar, Bo

Search in DiVA

By author/editor
Monemar, Bo
By organisation
Semiconductor MaterialsThe Institute of Technology
Chemical Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 120 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf